1 motorola igbt device data designer's ? data sheet insulated gate bipolar transistor nchannel enhancementmode silicon gate this igbt contains a builtin free wheeling diode and a gate protection zener diodes. fast switching characteristics result in efficient operation at higher frequencies. this device is ideally suited for high frequency electronic ballasts. ? builtin free wheeling diodes ? builtin gate protection zener diode ? industry standard package (to92 e 1.0 watt) ? high speed e off : typical 6.5 j @ i c = 0.3 a; t c = 125 c and dv/dt = 1000 v/ s ? robust high voltage termination ? robust turnoff soa maximum ratings (t c = 25 c unless otherwise noted) parameters symbol value unit collectoremitter voltage v ces 600 vdc collectorgate voltage (r ge = 1.0 m w ) v cgr 600 vdc gateemitter voltage e continuous v ges 15 vdc collector current e continuous @ t c = 25 c collector current e continuous @ t c = 90 c collector current e repetitive pulsed current (1) i c25 i c90 i cm 0.5 0.3 2.0 adc total power dissipation @ t c = 25 c p d 1.0 watt operating and storage junction temperature range t j , t stg 55 to 150 c thermal characteristics thermal resistance e junction to case igbt thermal resistance e junction to ambient r q jc r q ja 25 125 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c unclamped draintosource avalanche characteristics (t c 150 c) single pulse draintosource avalanche energy starting @ t c = 25 c energy starting @ t c = 125 c v ce = 100 v, v ge = 15 v, peak i l = 2.0 a, l = 3.0 mh, r g = 25 e as 125 40 mj (1) pulse width is limited by maximum junction temperature repetitive rating. designer's data for aworst caseo conditions e the designer's data sheet permits the design of most circuits entirely from the information presented. soa limit curves e representing boundaries on device characteristics e are given to facilitate aworst caseo design. designer's is a trademark of motorola, inc. rev 3 order this document by mgs13002d/d motorola semiconductor technical data mgs13002d igbt 0.5 a @ 25 c 600 v case 02905 style 35 to226ae e c g c e g ? motorola, inc. 1998
mgs13002d 2 motorola igbt device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectortoemitter breakdown voltage (v ge = 0 vdc, i c = 250 m adc) temperature coefficient (positive) v (br)ces 600 e 680 0.7 e e vdc v/ c zero gate voltage collector current (v ce = 600 vdc, v ge = 0 vdc) (v ce = 600 vdc, v ge = 0 vdc, t c = 125 c) i ces e e 0.1 5.0 5.0 50 m adc gatebody leakage current (v ge = 15 vdc, v ce = 0 vdc) i ges e 10 100 adc on characteristics collectortoemitter onstate voltage (v ge = 15 vdc, i c = 0.3 adc) (v ge = 15 vdc, i c = 0.3 adc, t c = 125 c) v ce(on) e e 1.6 1.5 2.0 e vdc gate threshold voltage (v ce = v ge , i c = 250 adc) threshold temperature coefficient (negative) v ge(th) 3.5 e e 6.0 6.0 e vdc mv/ c forward transconductance (v ce = 10 vdc, i c = 0.5 adc) g fe 0.3 0.42 e mhos dynamic characteristics input capacitance (v 20 vd v 0vd c ies e 75 100 pf output capacitance (v ce = 20 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 11 20 transfer capacitance f = 1 . 0 mhz) c res e 1.6 5.0 diode characteristics diode forward voltage drop (i ec = 0.3 adc) (i ec = 0.3 adc, t c = 125 c) (i ec = 0.1 adc) (i ec = 0.1 adc, t c = 125 c) v fec e e e e 5.0 5.2 2.3 2.3 6.0 e 3.0 e vdc reverse recovery time (i f = 0.4 adc, v r = 300 vdc, t rr e 150 e ns reverse recovery stored charge (i f 0 . 4 adc , v r 300 vdc , dif/dt = 10 a/ s) q rr e 35 e c switching characteristics (1) turnoff delay time (v cc = 300 vdc, i c = 0.4 adc, v 15 vd l 3 0 h r 25 w t d(off) e 28 e ns fall time ( cc , c , v ge = 15 vdc, l = 3.0 mh, r g = 25 w, t c = 2 5 c, d v /d t = 1 000 v / s) t f e 150 e turnoff switching loss t c = 25 c , dv/dt = 1000 v/ s) energy losses include atailo e off e 3.25 e j turnoff delay time (v cc = 300 vdc, i c = 0.4 adc, v 15 vd l 3 0 h r 25 w t d(off) e 21 e ns fall time ( cc , c , v ge = 15 vdc, l = 3.0 mh, r g = 25 w, t c = 12 5 c, d v /d t = 1 000 v / s) t f e 280 e turnoff switching loss t c = 125 c , dv/dt = 1000 v/ s) energy losses include atailo e off e 8.0 e j gate charge (v cc = 300 vdc, i c = 0.3 adc, v ge = 15 vdc) q t e 6.4 e nc (1) pulse test: pulse width 300 m s, duty cycle 2%.
mgs13002d 3 motorola igbt device data figure 1. saturation characteristics figure 2. saturation characteristics figure 3. saturation characteristics figure 4. collectortoemitter saturation voltage versus case temperature figure 5. diode forward voltage drop figure 6. diode forward voltage versus case temperature 1 v ce , collector-to-emitter voltage (volts) 2.5 2.0 1.5 1.0 v ce , collector-to-emitter voltage (volts) 6 0 1.5 0.5 0 t c , case temperature ( c) 0 -25 2.0 1.8 1.7 1.6 1.5 1.4 25 0.5 1.5 0 i f , instantaneous forward current (amps) 22 12 7 2 t c , case temperature ( c) 50 125 10 8 6 2 0 100 1.0 i c , collector current (amps) v ce , collector-to-emitter voltage (volts) 0.5 0 23 12345 1.0 2.0 2.5 50 75 100 125 150 , emitter-to-collector voltage (volts) v fec 2.0 17 25 75 150 4 v fec , collector-to-emitter voltage (volts) 4 i c , collector current (amps) 1 v ce , collector-to-emitter voltage (volts) 2.5 2.0 1.5 1.0 i c , collector current (amps) 0.5 0 234 1.9 t c = 25 c v ge = 15 v 12.5 v 10 v 8.0 v t c = 150 c v ge = 15 v 12.5 v 10 v 8.0 v t c = -20 c v ge = 15 v 12.5 v 10 v 8.0 v i c = 700 ma v g = 15 v 500 ma 300 ma t c = 150 c -20 c 25 c i c = 500 ma 300 ma 100 ma
mgs13002d 4 motorola igbt device data figure 7. capacitance variation figure 8. gatetoemitter voltage versus total charge figure 9. total switching losses versus collector current figure 10. total switching losses versus case temperature figure 11. minimum turnoff safe operating area 20 25 0 v ce , collector-to-emitter voltage (volts) 150 100 50 q g , total gate charge (nc) 6 0 10 5 0 2.0 0 i c , collector current (amps) 60 40 30 20 10 0 t c , case temperature ( c) 50 25 20 15 10 5 0 1.5 100 300 0 v ce , collector-to-emitter voltage (volts) 2.5 2.0 1.5 1.0 0.5 0 200 c, capacitance (pf) v , total switching energy losses ( j) 0 10 515 7 12345 15 0.5 1.0 75 100 150 , collector current (amps) i c 400 600 500 , gate-to-emitter voltage (volts) ge 50 e ts 125 , total switching energy losses ( j) e ts v ce = 300 v v ge = 15 v i c = 0.3 a t c = 25 c t c = 25 c v ge = 0 v c ies c oes c res l = 3.0 mh v cc = 300 v v ge = 15 v r g = 25 dv/dt = 1.0 kv/ s t j = 125 c 25 c l = 3.0 mh v cc = 300 v v ge = 15 v r g = 25 dv/dt = 1.0 kv/ s i c = 0.7 a 0.3 a t c = 125 c v ge = 15 v r g = 25 l = 3.0 mh
mgs13002d 5 motorola igbt device data t, time (ms) r(t), transient thermal resistance (normalized) 1.0 0.1 0.01 d = 0.5 single pulse 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.1 0.05 0.02 0.01 1.0e+02 1.0e+03 0.001 r q jc (t) = r(t) r q jc r q jc = 25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 figure 12. typical thermal response (r jc (t))
mgs13002d 6 motorola igbt device data package dimensions case 02905 to226ae issue ad notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p l f b k g h c v n n xx seating plane 1 j section xx d dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.022 0.46 0.56 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.135 --- 3.43 --- v 0.135 --- 3.43 --- 23 style 35: pin 1. gate 2. collector 3. emitter motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including at ypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa/europe/locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shagawaku, tokyo, japan. 035487 8488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com t ouchtone 16022446609 asia/pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ mgs13002d/d ?
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